Pulsed laser deposition of ZnO nanocluster films by Cu-vapor laser

Citation
Ln. Dinh et al., Pulsed laser deposition of ZnO nanocluster films by Cu-vapor laser, J APPL PHYS, 86(2), 1999, pp. 1149-1152
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
2
Year of publication
1999
Pages
1149 - 1152
Database
ISI
SICI code
0021-8979(19990715)86:2<1149:PLDOZN>2.0.ZU;2-Y
Abstract
The dependence of stoichiometry, grain size, cathodoluminescence colors, ad hesion, and surface morphology of zinc oxide films, deposited by a Cu-vapor laser at room temperature, as a function of oxygen ambient pressure during synthesis were investigated. Auger electron spectroscopy showed that ZnO f ilms with a Zn/O ratio close to 1 were obtained at oxygen pressures > 10(-1 ) Torr. X-ray diffraction revealed that pulsed laser deposited zinc oxide f ilms were composed mainly of nanocrystals, the average grain size of which grew from 5 to 17.5 nm as the oxygen pressure was increased from 10(-5) to 1 Torr. The surface morphology of the films, as determined by secondary ele ctron microscopy, also exhibited increasing roughness as the grain size inc reased. Films grown in an oxygen pressure > 1.5x10(-1) Torr glowed blue und er electron bombardment, while slightly substoichiometric films glowed whit e under similar excitation. Films deposited in an oxygen background pressur e up to 1.5x10(-1) Torr exhibited good adhesion to substrates. Deposition r ate on the order of 4.6 nm/s was obtained. (C) 1999 American Institute of P hysics. [S0021-8979(99)06314-8].