Simple interpretation of metal/wurtzite-GaN barrier heights

Authors
Citation
Vm. Bermudez, Simple interpretation of metal/wurtzite-GaN barrier heights, J APPL PHYS, 86(2), 1999, pp. 1170-1171
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
2
Year of publication
1999
Pages
1170 - 1171
Database
ISI
SICI code
0021-8979(19990715)86:2<1170:SIOMBH>2.0.ZU;2-3
Abstract
Photoemission data for the dependence of the Schottky barrier height on the metal work function, for n-type wurtzite GaN, are discussed in terms of th e Cowley-Sze model [J. Appl. Phys. 36, 3212 (1965)] for a uniform density o f surface states in the band gap. It is suggested that, in the context of t his model, such barrier heights can be expressed largely as a sum of the "b are-surface barrier height" (i.e., the band bending before contact formatio n) and a Mott-Schottky term. (C) 1999 American Institute of Physics. [S0021 -8979(99)02414-7].