Photoelectron diffraction study of the surfaces of Si(111)root 3X root 3-Al and -In with Mo M-zeta and Cr L-alpha lines

Laboratory X-ray sources of Mo M-zeta and Cr L-alpha lines were used for a photoelectron diffraction (PED) study of the well-documented surfaces of Si (111)root 3X root 3-Al and Si(111)root 3X root 3-In. Azimuthal angle PED pa tterns of Al 2p and In 3d core levels were measured and analyzed by a multi ple scattering formalism. The determined geometric parameters showed good a greement with those already established. This indicates the good potential of a FED study with laboratory sources. (C) 1999 Elsevier Science B.V. All rights reserved.