Direct atomic structure determination by scanned-energy photoelectron diffraction: Sb/GaAs(110)

Citation
H. Ascolani et al., Direct atomic structure determination by scanned-energy photoelectron diffraction: Sb/GaAs(110), J ELEC SPEC, 103, 1999, pp. 321-326
Citations number
17
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
103
Year of publication
1999
Pages
321 - 326
Database
ISI
SICI code
0368-2048(199906)103:<321:DASDBS>2.0.ZU;2-M
Abstract
Fourier transformation of experimental energy-dependent photoelectron diffr action (PED) data has been used to image independently the local structure of the two inequivalent adsorption sites of Sb at the GaAs(110)-p(1x1)Sb in terface. This approach is analogous to several recently developed direct me thods, even though it does not take into account the atomic scattering phas e shifts. Our results show that even this simple direct inversion is able t o provide the real-space images corresponding to the two inequivalent Sb ad atoms. The approximate structure obtained could be used as a starting point for a traditional 'trial and error' analysis, which refines and provides a n accurate surface structure. (C) 1999 Elsevier Science B.V. All rights res erved.