Intrinsic ionic centers in solid Xe were produced by (i) ionization in situ
by vacuum ultraviolet (VUV) light and (ii) deposition of ion-containing ga
s on cooled substrate. Laser-induced fluorescence (LIF) from the samples wa
s studied in the range of transitions between the ground state of ionic cen
ters and the lower excited states related to the P-2(1/2), P-2(3/2) limits
of Xe ions. The influence of the lattice defects which act as traps for cha
rge carriers was examined and conditions of the stability of ionic centers
were discussed. The coincidence of the LIF band observed with the samples g
rown from discharge with that observed under band-to-band excitation was fo
und. It suggests that the electronic structure of self-trapped holes (STHs)
is identical with that of intrinsic ionic centers formed in solid Xe after
deposition of ion-containing gas (Xe:). (C) 1999 Elsevier Science B.V. All
rights reserved.