Auger and X-ray photoelectron spectroscopy study of the density of oxygen states in bismuth, aluminium, silicon and uranium oxides

Citation
Ya. Teterin et al., Auger and X-ray photoelectron spectroscopy study of the density of oxygen states in bismuth, aluminium, silicon and uranium oxides, J ELEC SPEC, 103, 1999, pp. 401-405
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
103
Year of publication
1999
Pages
401 - 405
Database
ISI
SICI code
0368-2048(199906)103:<401:AAXPSS>2.0.ZU;2-9
Abstract
The correlation of relative partial electron density at the oxygen ions wit h the intensity of Auger O KLL lines in Bi2O3, Al2O3, SiO2 and UO2 has been determined by Auger and X-ray photoelectron spectroscopic methods. The dep endence of the relative intensities of Auger O KL2-3L2-3 and O KL1L2-3-line s was characterized from the binding energy of O 1s electrons. The electron density of the outer valence levels of oxygen increases as the relative in tensities of Anger O KL2-3L2-3 and O KL1L2-3-lines increase. The fine struc ture observed in the O KL1L2-3 Auger and the O 2s XPS spectra has been expl ained by the formation of inner valence molecular orbitals (IVMO) from the interaction of electrons of the O 2s and filled metal ns shells. (C) 1999 E lsevier Science B.V. All rights reserved.