High-temperature photoemission spectroscopy of the Ge(110) surface and high-temperature surface order-disorder phase transitions

Citation
A. Santoni et al., High-temperature photoemission spectroscopy of the Ge(110) surface and high-temperature surface order-disorder phase transitions, J ELEC SPEC, 103, 1999, pp. 423-427
Citations number
41
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
103
Year of publication
1999
Pages
423 - 427
Database
ISI
SICI code
0368-2048(199906)103:<423:HPSOTG>2.0.ZU;2-T
Abstract
The Ge(110) surface has been investigated by core-level and valence band (V B) photoemission spectroscopy as a function of temperature starting from th e room temperature c(8X10) reconstructed surface up to 1196 K. Evidence of a phase transition is found at about 750+/-50 K from core-level and valence band data analysis. VB photoemission shows that above 750 K the Ge(110) su rface acquires increasing metallic character up to 1110 K, where a sudden, intense jump of the emission intensity at the Fermi level is observed. At h igher temperatures up to 1196 K, a finite and constant density of states is observed, indicating the presence of a metallic surface layer. (C) 1999 El sevier Science B.V. All rights reserved.