Temperature effects of Ce3+ emissions from Gd2SiO5 : Ce and their high excitation states

Authors
Shi, CS Han, ZF Huang, SH Zhang, GB Zimmerer, G Beker, J Kamada, M Lu, LZ Yen, WM
Citation
Cs. Shi et al., Temperature effects of Ce3+ emissions from Gd2SiO5 : Ce and their high excitation states, J ELEC SPEC, 103, 1999, pp. 633-635
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
103
Year of publication
1999
Pages
633 - 635
Database
ISI
SICI code
0368-2048(199906)103:<633:TEOCEF>2.0.ZU;2-T
Abstract
In the range 15-453 K temperature dependence of Ce3+ emissions at 450 nm un der UV-VUV excitations is presented. Possible origins of two new emission b ands at 582 and 651 nm have been discussed. The strong excitation states in 3-30 eV are also analyzed. (C) 1999 Elsevier Science B.V. All rights reser ved.