Photoemission and inverse-photoemission studies of Bi2Y3 (Y=S, Se, Te) semiconductors

Authors
Ueda, Y Furuta, A Okuda, H Nakatake, M Sato, H Namatame, H Taniguchi, M
Citation
Y. Ueda et al., Photoemission and inverse-photoemission studies of Bi2Y3 (Y=S, Se, Te) semiconductors, J ELEC SPEC, 103, 1999, pp. 677-680
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
103
Year of publication
1999
Pages
677 - 680
Database
ISI
SICI code
0368-2048(199906)103:<677:PAISOB>2.0.ZU;2-Q
Abstract
Valence-band and conduction-band densities of states (DOSs) of Bi2Y3 (Y=S, Se, Te) semiconductors have been investigated by means of ultraviolet photo emission (UPS) and inverse-photoemission spectroscopy (IPES). With the aid of calculated partial density of states for Bi2Te3 and the UPS and IPES spe ctra for Bi2Te2Se crystals grown by substituting Te(2) atoms in Bi2Te3 with Se atoms, we assign the partial DOSs for Bi2Te3 and Bi2Se3. Furthermore, i t is found that Bi2S3 has the largest band gap (1.1 eV) among these three B i2Y3 compounds. (C) 1999 Elsevier Science B.V. All rights reserved.