On the possibility of beta-C3N4 carbon nitride synthesis via C and N implantation into copper

Authors
Jagielski, J Moncoffre, N Delichere, P Marest, G
Citation
J. Jagielski et al., On the possibility of beta-C3N4 carbon nitride synthesis via C and N implantation into copper, J MATER SCI, 34(12), 1999, pp. 2949-2954
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
34
Issue
12
Year of publication
1999
Pages
2949 - 2954
Database
ISI
SICI code
0022-2461(19990615)34:12<2949:OTPOBC>2.0.ZU;2-O
Abstract
The effects of high dose carbon and nitrogen implantations into copper on t he type of chemical bonds and stoichiometry of the formed C-N phases are de scribed. The results are compared with those obtained after nitrogen implan tation into diamond like carbon (DLC) layers. The striking difference betwe en the two experiments is the stoichiometry of covalently bonded C-N phase which corresponds to C2N or to C3N3.7 for N implantation into DLC and C and N implantation into copper, respectively. (C) 1999 Kluwer Academic Publish ers.