Study of overgrowth heterostructure InSb GaAs by scanning electron acoustic microscopy

An overgrowth InSb epilayer on GaAs substrate with large lattice-mismatch w as grown by metalorganic chemical vapor deposition (MOCVD), and the heterog eneous crystalline state was observed by scanning electron acoustic microsc opy (SEAM). The middle stage of relaxation of the large mismatch InSb/GaAs epilayer is observed by SEAM images of crystalline state of the buried subs urfaces. A macroscopical heterogeneous distribution is formed by large comp ression stress fields. It was a very important result to observe and study semiconductor epitaxial heterostructures by SEAM uniquely imaging mechanism . (C)1999 Kluwer Academic Publishers.