Specular and non-specular x-ray scattering study of SiO2/Si structures

In this investigation we apply the x-ray reflectivity and diffuse scatterin g measurements to study the interface and surface morphology and bulk prope rties of SiO2 amorphous films grown on Si substrates. Three samples with di fferent interface and surface roughnesses are analysed. Simultaneous fittin g of both specular reflectivity and diffuse scattering curves allows the de termination of precise values of surface and interface roughness, film thic kness and bulk density of silicon dioxide films. The distorted-wave Born ap proximation is used for quantitative characterization of diffuse scattering from the samples. The structural parameters obtained by the x-ray method a gree with atomic force microscopy results.