Crystallization of In2Se3 semiconductor thin films by post-deposition heattreatment. Thickness and substrate effects

Polycrystalline thin films of gamma-In2Se3 were grown on various substrates by sequential thermal evaporation of In and Se. The crystallization was ac hieved by annealing the as-deposited films in flowing nitrogen. The deposit ions were carried out for different atomic ratios (1.5 less than or equal t o R = [Se]/[In] less than or equal to 5) and the annealings performed at 40 0 degrees C for 0.5 h. X-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, x-ray photoelectron spectroscopy and Raman s cattering have shown that thin films of high crystalline quality were obtai ned. The influence of the substrate nature as well as the film thickness on the crystallite preferential orientation and size is studied.