Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates

In this paper, we demonstrate the unique ability of a newly developed slow- trap profiling technique to characterise silicon-based MOS capacitors in st rong inversion. We also demonstrate the applicability of the slow-trap prof iling technique for the characterisation of oxides grown on SiC. The obtain ed slow-trap profiles show that NO nitridation eliminates while N2O creates defects acting as slow traps in the case of both Si and SiC substrates. Th e corresponding effects of nitridation on interface traps and fixed oxide c harge are also discussed. (C) 1999 Elsevier Science Ltd. All rights reserve d.