BeTe Si heterostructures for MIS and quantum device applications

The fabrication of silicon-based quantum devices and advanced buried-gate M IS transistors and circuits may require the development of an epitaxial ins ulating material that is lattice matched to silicon and also bonds with it to minimize interface states. We report the results of a search for new mat erials based on earlier partial successes with ZnS/Si. This work has identi fied beryllium chalcogenides as candidates with high stacking-fault energie s for defect suppression. Initial growth and characterization experiments o n BeTe/Si, a lattice mismatched system, bear out the theoretical prediction s, and result in high-quality insulating films with >1 MV cm(-1) breakdown fields. These experiments strongly suggest that lattice-matched BeSe0.45Te0 .55 will be an even more suitable material.