Conduction-band structure of Bi2-xSbxSe3 mixed crystals by Shubnikov-de Haas and cyclotron resonance measurements in high magnetic fields

The conduction-band structure of single crystals Bi2-xSbxSe3 (0 less than o r equal to x less than or equal to 0.52) was investigated in high magnetic fields by the Shubnikov-de Haas (SdH) effect (up to 40 T) and cyclotron res onance (up to 150 T). Signals from two conduction bands were detected in bo th experiments. The anisotropy of the Fermi surface and the effective masse s for magnetic fields B parallel to c and B perpendicular to c were determi ned for different x. It was found that the cyclotron masses for B parallel to c in the upper and lower conduction bands do not depend on temperature o r electron concentration. The temperature dependence of the resistivity, th e Hall effect, and the Seebeck coefficient. have been measured as functions of Sb concentration x. The free-electron concentration was found to be sup pressed by the incorporation of Sb into Bi2Se3 crystals. [S0163-1829(99)036 23-1].