The role of defect stares and band tails in the increase of capacitance (im
aginary part of ac conductivity) with illumination at 20 K is discussed for
a-As2Se3 thin films. The time increase of capacitance with illumination ha
s two components, fast and slow. The initial abrupt increase is attributed
to the hopping of holes in the band tails. The slow increase is related to
the creation of new defects and the subsequent electron hopping between the
m. When illumination is switched off, the contribution of hopping of holes
in the tail states ceases, while the contribution of newly created defects
persists. This persistent change is annealed out at room temperature. The i
llumination and annealing behaviors of the slow process can be related to t
hose of the light-induced electron-spin resonance.