Atomic structure of the Si(113)-(3 x 1) surface: Charge transfer within tetramers

Citation
Cc. Hwang et al., Atomic structure of the Si(113)-(3 x 1) surface: Charge transfer within tetramers, PHYS REV B, 59(23), 1999, pp. 14864-14867
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
23
Year of publication
1999
Pages
14864 - 14867
Database
ISI
SICI code
0163-1829(19990615)59:23<14864:ASOTSX>2.0.ZU;2-T
Abstract
Atomic structure of the Si(113)3 x 1 surface was investigated by using sync hrotron radiation photoemission spectroscopy. The Si 2p core-level spectra were measured at surface-sensitive photon energy, 132 eV. From the fitting of the Si 2p core-level spectrum for the Si(113)3 x 1 surface, three surfac e components were resolved at binding energies of about 0.745, - 0.554, and 0.34 eV, respectively. The fitting results show that the dimers receive ab out 0.16 electrons and the rest of tetramers donate about 0.22 electrons on the Si(113)3 x 1 surface. This strongly supports the fact that the dimers and the rest of the tetramers are relaxed upward and downward, respectively , on Ranke's model.