Predictor of p-type doping in II-VI semiconductors

Authors
Chadi, DJ
Citation
Dj. Chadi, Predictor of p-type doping in II-VI semiconductors, PHYS REV B, 59(23), 1999, pp. 15181-15183
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
23
Year of publication
1999
Pages
15181 - 15183
Database
ISI
SICI code
0163-1829(19990615)59:23<15181:POPDII>2.0.ZU;2-I
Abstract
The structure for the ground state of the AX deep acceptor center in II-VI semiconductors is identified and the sign of its formation energy is found to be a reliable indicator of p-type dopability. Results from ab initio tot al-energy calculations on ZnS, ZnSe, ZnTe, and CdTe doped with N, P, As, or Sb show that the tendency for deep center AX formation arising from large- lattice-relaxation is strongly correlated with dopant inactivity in II-VI s emiconductors. [S0163-1829(99)02224-9].