The surface atomic structure of the molecular-beam epitaxy prepared As-rich
InAs(100) (2 x 4) reconstruction has been solved by synchrotron radiation
surface x-ray diffraction. Analysis of a large set of nonequivalent in-plan
e diffraction peaks and seven out-of-plane rods yields the so-called beta 2
-(2 x 4) model, a now recognized model for the As-rich GaAs(100) (2 x 4) st
ructure. The structure comprises two As dimers in the top layer and one As
dimer in the third layer below the first incomplete In layer. [S0163-1829(9
9)01723-3].