Atomic structure of the As-rich InAs(100) beta 2(2 x 4) surface

Citation
M. Gothelid et al., Atomic structure of the As-rich InAs(100) beta 2(2 x 4) surface, PHYS REV B, 59(23), 1999, pp. 15285-15289
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
23
Year of publication
1999
Pages
15285 - 15289
Database
ISI
SICI code
0163-1829(19990615)59:23<15285:ASOTAI>2.0.ZU;2-E
Abstract
The surface atomic structure of the molecular-beam epitaxy prepared As-rich InAs(100) (2 x 4) reconstruction has been solved by synchrotron radiation surface x-ray diffraction. Analysis of a large set of nonequivalent in-plan e diffraction peaks and seven out-of-plane rods yields the so-called beta 2 -(2 x 4) model, a now recognized model for the As-rich GaAs(100) (2 x 4) st ructure. The structure comprises two As dimers in the top layer and one As dimer in the third layer below the first incomplete In layer. [S0163-1829(9 9)01723-3].