Localization-enhanced biexciton binding in semiconductors

Authors
Langbein, W Hvam, JM
Citation
W. Langbein et Jm. Hvam, Localization-enhanced biexciton binding in semiconductors, PHYS REV B, 59(23), 1999, pp. 15405-15408
Citations number
39
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
23
Year of publication
1999
Pages
15405 - 15408
Database
ISI
SICI code
0163-1829(19990615)59:23<15405:LBBIS>2.0.ZU;2-A
Abstract
The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxG a1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton b inding energy. A simple analytical model for localization in the weak confi nement regime ascribes the increase to a quenching of the additional kineti c energy of the exciton-exciton motion in the biexciton.