Hyper-Raman scattering in semiconductors: A quantum optical process in thestrong-coupling regime

Citation
S. Savasta et R. Girlanda, Hyper-Raman scattering in semiconductors: A quantum optical process in thestrong-coupling regime, PHYS REV B, 59(23), 1999, pp. 15409-15421
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
23
Year of publication
1999
Pages
15409 - 15421
Database
ISI
SICI code
0163-1829(19990615)59:23<15409:HSISAQ>2.0.ZU;2-A
Abstract
We present a theory of hyper-Raman scattering in semiconductors. The theory provides a microscopic description of this process intimately tied to the quantization of the electromagnetic field. The exciton-photon coupling is t reated nonperturbatively to include polariton effects and the Coulomb inter action between electrons is treated beyond the Hartree-Fock approximation o f semiconductor Bloch equations. The theory demonstrates the: role of the q uantum-mechanical zero-point motion of excitons in the optical decay of the virtually excited biexcitons into two final polaritons or a longitudinal e xciton and a polariton. We calculate the steady state emission spectrum and present numerical results for CuCl.