Several models of molecular-beam epitaxy, both atomistic and ones based on
Langevin equations, have as one of their generic growth scenarios the forma
tion of three-dimensional structures such as mounds or pyramids. The charac
teristic size R of these structures increases as a function of deposition t
ime with a power law R similar to t(n). In order to investigate the depende
nce of the growth exponent n on the characteristics of the fluctuations of
the deposition flux we compare results of Monte-Carlo simulations for rando
m deposition and for deposition on an artificially constructed deterministi
c sequence of sites. Although the latter algorithm leads to much smaller he
ight fluctuations on each site, the growth exponent in both cases is found
to be dose to 0.25.