Growth mechanism and polytypism of SiC epitaxial layers: Color cathodoluminescence-scanning electron microscope study

Authors
Mokhov, EN Saparin, GV Obyden, SK
Citation
En. Mokhov et al., Growth mechanism and polytypism of SiC epitaxial layers: Color cathodoluminescence-scanning electron microscope study, SCANNING, 21(2), 1999, pp. 160-161
Citations number
3
Categorie Soggetti
Multidisciplinary,"Spectroscopy /Instrumentation/Analytical Sciences
Journal title
SCANNING
ISSN journal
01610457 → ACNP
Volume
21
Issue
2
Year of publication
1999
Pages
160 - 161
Database
ISI
SICI code
0161-0457(199903/04)21:2<160:GMAPOS>2.0.ZU;2-E