Factors which determine the orientation of CVD Al films grown on TiN

Citation
M. Avinun et al., Factors which determine the orientation of CVD Al films grown on TiN, SOL ST ELEC, 43(6), 1999, pp. 1011-1014
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
6
Year of publication
1999
Pages
1011 - 1014
Database
ISI
SICI code
0038-1101(199906)43:6<1011:FWDTOO>2.0.ZU;2-A
Abstract
CVD Al deposited on a TiN/Ti liner followed by 'warm' PVD Al (Cu) is a prom ising approach for filling high aspect ratio vias. A highly (111) textured film is important to achieve high electromigration resistivity. The depende nce of the Al orientation on the type of the underlying TIN liner and the m echanism responsible for this effect were investigated. HRTEM was used to c haracterize the structure of the Al grains (after 1 s of deposition), throu gh to a continuous film, as well as the structure of the interface of thick Ai films with TiN. The microscopy results helped to explain the X-ray diff raction observations that on PVD TIN the Al film had a stronger (111) textu re than on other TiN types. This is attributed to a topotaxial relationship , which forms during the nucleation stage of the CVD Al. (C) 1999 Elsevier Science Ltd. All rights reserved.