CVD Al deposited on a TiN/Ti liner followed by 'warm' PVD Al (Cu) is a prom
ising approach for filling high aspect ratio vias. A highly (111) textured
film is important to achieve high electromigration resistivity. The depende
nce of the Al orientation on the type of the underlying TIN liner and the m
echanism responsible for this effect were investigated. HRTEM was used to c
haracterize the structure of the Al grains (after 1 s of deposition), throu
gh to a continuous film, as well as the structure of the interface of thick
Ai films with TiN. The microscopy results helped to explain the X-ray diff
raction observations that on PVD TIN the Al film had a stronger (111) textu
re than on other TiN types. This is attributed to a topotaxial relationship
, which forms during the nucleation stage of the CVD Al. (C) 1999 Elsevier
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