Silicide reaction of Co with Si0.999C0.001

The disilicide of Co is a promising metallic material for the submicron tec hnology with the advantage of a low specific resistivity as well as of a lo w preparation temperature, A further downscaling in the Si technology requi res in addition to lower process temperatures an effective conservation of dopant distributions. One method for trappings doping profiles is the admix ture of a small concentration of carbon to the Si. This paper reports on th e Co silicide formation on Si0.999C0.001(001) substrate layers. The Co film s were deposited by e-beam evaporation under UHV conditions. To investigate the reaction of the Co films with the substrate layers performed by rapid thermal annealing the samples were characterized by Rutherford backscatteri ng and measuring the electrical resistance at room temperature. Compared wi th Si(001) a small increase of the thermal budget for the CoSi2? formation on Si0.999C0.001(001) has been found. For samples annealed at 650 degrees C for 30 s the resistivity in dependence on temperature was determined. The analysis of this data using the Bloch-Gruneisen equation reveals a good ele ctrical quality of the prepared CoSi2 films. (C) 1999 Elsevier Science Ltd. All rights reserved.