Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs

Authors
Guziewicz, M Piotrowska, A Kaminska, E Golaszewska, K Turos, A Mizera, E Winiarski, A Szade, J
Citation
M. Guziewicz et al., Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs, SOL ST ELEC, 43(6), 1999, pp. 1055-1061
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
6
Year of publication
1999
Pages
1055 - 1061
Database
ISI
SICI code
0038-1101(199906)43:6<1055:COSTZA>2.0.ZU;2-0
Abstract
The sputter deposition of TIN, ZrB2 and W2B thin films were studied in orde r to develop the process parameters for advanced metallizations to GaAs dev ices. Thin films of TiN, ZrB2 and W2B were deposited on both bare and AuZn- metallized (100) GaAs substrate in magnetron sputtering systems. The resist ivity and stress in as-deposited thin films were examined and related to de position conditions. The film microstructure and composition of grown compo unds were determined by X-ray diffraction, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). It was observed that met al boride films were polycrystalline or amorphous depending on the sputteri ng conditions. Diffusion barrier properties were analyzed by Rutherford bac kscattering spectroscopy (RBS) technics. (C) 1999 Elsevier Science Ltd. All rights reserved.