Porous silicon - mechanisms of growth and applications

Authors
Parkhutik, V
Citation
V. Parkhutik, Porous silicon - mechanisms of growth and applications, SOL ST ELEC, 43(6), 1999, pp. 1121-1141
Citations number
156
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
6
Year of publication
1999
Pages
1121 - 1141
Database
ISI
SICI code
0038-1101(199906)43:6<1121:PS-MOG>2.0.ZU;2-U
Abstract
The present state-of-the-art in understanding the mechanisms of the formati on of porous silicon (PS) and its physical properties is reviewed, with spe cial emphasis on problems which were not much in the focus of existing revi ew literature: mechanisms of the pore growth, stability of the PS propertie s in environment and electrical properties of PS layers. Emerging applicati ons of porous silicon in different fields of technology are outlined. (C) 1 999 Published by Elsevier Science Ltd. All rights reserved.