We discuss the limitations of the orthodox Coulomb-blockade theory when app
lied to silicon quantum dots in the nanometer range and we present a simple
Poisson-Schrodinger model to evaluate the quantum contribution in these ca
ses. This contribution can be seen as a quantum capacitance in series with
the sum of capacitance around the dot. This simple model gives results simi
lar to a more sophisticated one which includes Pauli principle, with a prec
ision of the order of room-temperature thermal-energy kT. Finally we show t
hat the simple model can be easily included in micro-electronic simulators
and therefore can be very effective to predict new properties of future qua
ntum devices. All the effects discussed in this paper are room-temperature
effects, (C) 1999 Elsevier Science Ltd, All rights reserved.