The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

The paper describes the formation of Ge nanocrystals in thin thermally grow n SiO2-layers (d(ox) less than or equal to 100 nm) using implantation of 10 (15)-2 x 10(16) Ge+/cm(2) and subsequent annealing, Although the implanted Ge depth profile is distributed over almost the whole SiO2 layer, a very na rrow band (typical width 5 nm) of Ge nanoclusters very close but well-separ ated to the Si/SiO2-interface is formed by self-organization under specifie d annealing conditions. A possible mechanisms for this self-organization pr ocess is discussed including nucleation phenomena, Ostwald ripening and def ect-stimulated interface processes, Simple MOS-structures were prepared and the effect of charge storage inside the dusters has been derived from C-V characteristics. (C) 1999 Elsevier Science Ltd, All rights reserved.