Influence of carbon-containing contamination in the luminescence of poroussilicon

Authors
Guerrero-Lemus, R Ben Hander, FA Moreno, JD Martin-Palma, RJ Martinez-Duart, JM Gomez-Garrido, P
Citation
R. Guerrero-lemus et al., Influence of carbon-containing contamination in the luminescence of poroussilicon, SOL ST ELEC, 43(6), 1999, pp. 1165-1169
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
6
Year of publication
1999
Pages
1165 - 1169
Database
ISI
SICI code
0038-1101(199906)43:6<1165:IOCCIT>2.0.ZU;2-H
Abstract
This paper is focused to study the variations of the photoluminescent prope rties of porous silicon when samples are immersed in deionized water or eth anol after etching. The emission peaks in the photoluminescence spectrum re dshift and decreases with immersion time. We have observed that the photolu minescence disappears after about 20 h immersion in ethanol. The results ar e interpreted in terms of carbon contamination in the surface, This hypothe sis is confirmed by Fourier transform infrared and X-ray photoelectron spec troscopies. (C) 1999 Published by Elsevier Science Ltd, All rights reserved .