We present the results from density-functional calculations of the phonon d
ispersion of adsorbate-covered semiconductor surfaces. The plane-wave metho
d is used together with the slab-supercell description for the surfaces. We
focus on vibrational states that characterize the chemisorption site of th
e adsorbed atoms and phonon modes of the interface. By comparing the vibrat
ional states in the presence of the adsorbates with those of the clean surf
aces, adsorption-induced changes of the surface geometry and force constant
s can be identified. We study the chemisorption of hydrogen, antimony, and
group-III elements on the (110) surfaces of III-V compounds, as well as on
the (001) and (111) surfaces of silicon. (C) 1999 Elsevier Science B.V. All
rights reserved.