We have used infra-red absorption spectroscopy (IRAS) in the multiple inter
nal reflection (MIR) geometry to investigate in-situ and real-time etching
and oxidation processes on Si surfaces. IRAS-MIR, with its high surface sen
sitivity and energy resolution, is particularly suitable for investigating
the atomic bonding configuration of hydrogen in the Vicinity of the surface
. We present the experimental results on (1) etching of Si(100) by atomic h
ydrogen, (2) oxidation of Si(100) by the water molecule, (3) hydrogen excha
nge reaction on Si surface in water and (4) oxidation of Si surface in wate
r. IR data show that hydrogen plays an important role in the etching and ox
idation processes on Si surfaces, and that MIR-IR is a powerful tool for th
e atomic-scale investigation of chemical processes on Si surfaces. (C) 1999
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