Influence of the doping of the polymer on the dark and photoelectrical properties in the junction ITO/poly(4,4 '-dipentoxy-2,2 '-bithiophene)/aluminium
N. Camaioni et al., Influence of the doping of the polymer on the dark and photoelectrical properties in the junction ITO/poly(4,4 '-dipentoxy-2,2 '-bithiophene)/aluminium, SYNTH METAL, 104(3), 1999, pp. 169-173
The transport properties of the system, ITO/poly(4,4'-dipentoxy-2,2'-bithio
phene)/aluminium, were investigated both in the dark and under white light
illumination for three different oxidation states of the polymer. A deterio
ration of both the rectification properties in the dark and the photovoltai
c performances was observed by increasing the doping level. The less-doped
junction was tested in photoconductive mode and an exponential relationship
was found between the photosensitivity and the reverse voltage applied to
the junction. A photosensitivity of the order of 10(-3) A W-1 was achieved
for an applied voltage as low as 2 V over the full range of the incident po
wer intensity (0.4-33 mW cm(-2)). (C) 1999 Elsevier Science S.A. All rights
reserved.