The application of Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine, amino-tri-tert-butyl-phthalocyanine, in diodes and in all organic field-effect-transistors
Wp. Hu et al., The application of Langmuir-Blodgett films of a new asymmetrically substituted phthalocyanine, amino-tri-tert-butyl-phthalocyanine, in diodes and in all organic field-effect-transistors, SYNTH METAL, 104(1), 1999, pp. 19-26
Amino-tri-tert-butyl-phthalocyanine (AmBuPc) was used as the semiconductor
thin layers in model Schottky diode and all organic field-effect transistor
(OFET). The diode cell showed a rectifying effect with a rectification rat
io of 60 at +/-3.2 V. The ideality factors were 1.38 in the low voltage reg
ion and 3.09 in the high voltage region, respectively. The results of OFET
proved that AmBuPc Langmuir-Blodgett (LB) films could be used as the semico
nducting layer of OFET, and the OFET could function as a p-channel accumula
tion device. From the OFET electrical characteristics, the channel carrier
mobility is calculated to be about 5.2 X 10(-6) cm(2) V-1 s(-1), which is h
igher than that of vacuum-deposited film OFET (7.8 X 10(-7) cm(2) V-1 s(-1)
) utilizing the same polymer. This phenomenon can be explained as the highl
y ordered structure of AmBuPc molecules in the LB films. This suggests that
a wide conduction channel is able to form in this all organic device, whic
h provides a new method to simplify the fabrication process of OFET and imp
rove their properties. (C) 1999 Elsevier Science S.A. All rights reserved.