A direct preparation of polycrystalline layers of beta-ET2I3 by reaction of
ET and I-2 in swollen polymer film at elevated temperature is shown. The f
ilms obtained under optimum conditions show metallic d.c. conductivity down
to liquid helium temperature. XRD and Raman spectra confirm the formation
of ET2I3 beta-phase. In the films obtained at non-optimum conditions (shore
treatment time and/or lower temperature) a mixture of alpha and beta-phase
is obtained. Such films become semiconducting a' low temperatures.