Direct preparation of polymer composites with beta-ET2I3 polycrystalline layers.

Citation
Jk. Jeszka et al., Direct preparation of polymer composites with beta-ET2I3 polycrystalline layers., SYNTH METAL, 103(1-3), 1999, pp. 1820-1821
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
103
Issue
1-3
Year of publication
1999
Pages
1820 - 1821
Database
ISI
SICI code
0379-6779(199906)103:1-3<1820:DPOPCW>2.0.ZU;2-R
Abstract
A direct preparation of polycrystalline layers of beta-ET2I3 by reaction of ET and I-2 in swollen polymer film at elevated temperature is shown. The f ilms obtained under optimum conditions show metallic d.c. conductivity down to liquid helium temperature. XRD and Raman spectra confirm the formation of ET2I3 beta-phase. In the films obtained at non-optimum conditions (shore treatment time and/or lower temperature) a mixture of alpha and beta-phase is obtained. Such films become semiconducting a' low temperatures.