Metal-insulator transition in (TTM-TTP)(I-3)(5/3) with high oxidation state

Authors
Kawamoto, T Mori, T Misaki, Y Tanaka, K Mori, H Tanaka, S
Citation
T. Kawamoto et al., Metal-insulator transition in (TTM-TTP)(I-3)(5/3) with high oxidation state, SYNTH METAL, 103(1-3), 1999, pp. 1829-1830
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
103
Issue
1-3
Year of publication
1999
Pages
1829 - 1830
Database
ISI
SICI code
0379-6779(199906)103:1-3<1829:MTI(WH>2.0.ZU;2-W
Abstract
(TTM-TTP)(I-3)(5/3) (TTM-TTP: 2,5-bis[4,5-(methylthio)-1,3-dithiol-2-yliden e]- 1,3,4,6-tetrathiapentalene) and its isostructual methylseleno-substitut ed compounds show metallic behavior above T-MI approximate to 20 K in spite of large positive charge +5/3. High pressure resistivity and ESR measureme nts have been carried out. Both salts remain paramagnetic down to 2.9 K; no evidence of spin-Peierls or antiferromagnetic transition is obtained.