Quantum Hall effect and edge states in (TMTSF)(2)PF6

Citation
Jb. Young et al., Quantum Hall effect and edge states in (TMTSF)(2)PF6, SYNTH METAL, 103(1-3), 1999, pp. 2113-2114
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
103
Issue
1-3
Year of publication
1999
Pages
2113 - 2114
Database
ISI
SICI code
0379-6779(199906)103:1-3<2113:QHEAES>2.0.ZU;2-X
Abstract
Study of high quality (TMTSF)(2)PF6 crystals reveals that the quantum Hall effect seen in the field-induced spin density wave states is accompanied by nearly vanishing longitudinal magnetoresistance. Motivated by these findin gs, we examine whether there are current carrying edge states associated wi th the quantum Hall effect in the (TMTSF)(2)X Bechgaard salts. Measurements of in-plane and out-plane resistivities, R-xx and R-zz, and 2 and 4-termin al resistance suggest that the transport in the Bechgaard salts is dominate d by the bulk and that it is difficult to separate the contribution from th e edge states.