I.III.VI2 chalcopyrites received serious attention as attractive candidates
as active layers in polycrystalline thin films solar cell. In the ternary
I.III.VI2 family. CuAlX2 appears as good candidates as buffer layers in Cu(
In. Ga)Se-2 based solar cells. these films can be obtained by annealing of
Cu/Al/Sc... sequentially deposited structure. The annealed films are charac
terised by XPS. XRD. SEM. Microprobe analysis and then they are optically e
t electrically characterized. It is shown that ternary compounds crystalliz
ed in the expected chalcopyrite structure are obtained. The optical and ele
ctrical properties of the films confirms that they are good candidates to r
eplace CdS buffer layers in solar cells.