New ternary compounds CuAlX2 (X = Te, Se) buffer layers: Large band gap

Citation
K. Benchouk et al., New ternary compounds CuAlX2 (X = Te, Se) buffer layers: Large band gap, SYNTH METAL, 103(1-3), 1999, pp. 2644-2645
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
103
Issue
1-3
Year of publication
1999
Pages
2644 - 2645
Database
ISI
SICI code
0379-6779(199906)103:1-3<2644:NTCC(=>2.0.ZU;2-6
Abstract
I.III.VI2 chalcopyrites received serious attention as attractive candidates as active layers in polycrystalline thin films solar cell. In the ternary I.III.VI2 family. CuAlX2 appears as good candidates as buffer layers in Cu( In. Ga)Se-2 based solar cells. these films can be obtained by annealing of Cu/Al/Sc... sequentially deposited structure. The annealed films are charac terised by XPS. XRD. SEM. Microprobe analysis and then they are optically e t electrically characterized. It is shown that ternary compounds crystalliz ed in the expected chalcopyrite structure are obtained. The optical and ele ctrical properties of the films confirms that they are good candidates to r eplace CdS buffer layers in solar cells.