Near-field scanning optical microscopy (NSOM) is used to modify the surface
of thin films of poly[2-methoxy,5-(2'-ethylhexoxy)-1,4-phenylenevinylene]
(MEH-PPV) with spatial resolution of 100 nm. Thin films were patterned usin
g the NSOM tip with high power illumination (approaching 1 kW/cm(2)). This
exposure results in both a reduction of the photoluminescence of the film a
nd a change in the surface topography (a surface depression). By monitoring
the broadening of the emission spectrum as a function of exposure time in
ambient conditions and under flowing nitrogen, we confirm that the pattern
is due to photo-oxidation, We have thoroughly examined the dependence of th
e depth of contrast, the size of the dark spot and the size of the surface
depression on illumination power, energy migration and exposure time. In ad
dition, we have created a number of patterns with features limited only by
the size of the NSOM tip.