Solution-phase deposition of oligomeric TFT semiconductors

Citation
He. Katz et al., Solution-phase deposition of oligomeric TFT semiconductors, SYNTH METAL, 102(1-3), 1999, pp. 897-899
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
897 - 899
Database
ISI
SICI code
0379-6779(199906)102:1-3<897:SDOOTS>2.0.ZU;2-4
Abstract
Until now, most organic-based FETs have been fabricated by subliming the ac tive films onto device substrates at high vacuum, whereby useful orientatio nal order and intergrain connectivity are obtained For lower-cost devices, a major challenge is to duplicate this performance in semiconductors deposi ted from solution. We have prepared several thiophene-based compounds, both oligomers and thienoaromatics, that display high mobilities, in some cases equivalent to vacuum-deposited films, when cast from common solvents. The similarities between liquid- and vapor-phase processed films suggest that o ligomer solutions may be valuable for the production of all-organic electro nic circuitry.