High efficiency polymer photodiodes

Citation
M. Granstrom et al., High efficiency polymer photodiodes, SYNTH METAL, 102(1-3), 1999, pp. 957-958
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
957 - 958
Database
ISI
SICI code
0379-6779(199906)102:1-3<957:HEPP>2.0.ZU;2-L
Abstract
Organic polymer photodiodes have been fabricated using different device des igns, and by the use of blends between derivatives of poly(thiophene) and p oly(phenylene vinylene), a broad wavelength response is accomplished. For s ingle layer devices, an external quantum yield of 4.5% is achieved under sh ort-circuit conditions, increasing to 28% at 2V negative bias. Even better results are found for double layer devices, having a spectral response cove ring the range from 350 nm to 750 nm, and exhibiting 28% external quantum y ield at short circuit and reaching almost 60% at -2V bias.