Citation
Jm. Maud et al., Thin film transistors based on thienylenevinylene oligomers : structure property relationships, SYNTH METAL, 102(1-3), 1999, pp. 984-984
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779
→ ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
984 - 984
Database
ISI
SICI code
0379-6779(199906)102:1-3<984:TFTBOT>2.0.ZU;2-1
Abstract
Thin film transistors were fabricated using thienylenevinylene oligomers as
the active layers. Field effect carrier mobilities increased as the lowest
transition energy of the oligomer radical cation (positive polaron) decrea
sed.