Enhanced field effect carrier mobilities in pentacene based thin film transistors via pulsed laser deposition.

Authors
Maud, JM Salih, AJ Marshall, JM
Citation
Jm. Maud et al., Enhanced field effect carrier mobilities in pentacene based thin film transistors via pulsed laser deposition., SYNTH METAL, 102(1-3), 1999, pp. 986-986
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
986 - 986
Database
ISI
SICI code
0379-6779(199906)102:1-3<986:EFECMI>2.0.ZU;2-O
Abstract
Field effect carrier mobilities in pentacene based thin film transistors ar e improved considerably when the active layer is deposited via pulsed laser deposition rather than by thermal evaporation. Atomic force microscopy mea surements are consistent with improved molecular ordering in the pulsed las er deposited pentacene thin films.