Preparation of bis(dithienothiophene) derivatives for organic thin film transistors

Authors
Morrison, JJ Murray, MM Li, XC Holmes, AB Morratti, SC Friend, RH Sirringhaus, H
Citation
Jj. Morrison et al., Preparation of bis(dithienothiophene) derivatives for organic thin film transistors, SYNTH METAL, 102(1-3), 1999, pp. 987-988
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
987 - 988
Database
ISI
SICI code
0379-6779(199906)102:1-3<987:POBDFO>2.0.ZU;2-B
Abstract
The synthesis of two alpha,alpha'-disubstituted bis(dithienothiophene) (BDT ) derivatives is described. These have been deposited by vacuum sublimation as the active layers in organic thin film transistors (TFTs). The devices exhibit high ON/OFF ratios, and preliminary studies show mobilities of 1 x 10(-3) and 2 x 10(-2) cm(2) V-1 s(-1) respectively for dithiohexyl (DTH-BDT ) and dioctyl (DO-BDT) substituted bis(dithienothiophene). DTH-BDT is found to be considerably more soluble than the unsubstituted BDT.