Investigations into a low band gap, semiconducting polymer

Authors
Mills, CA Taylor, DM Murphy, PJ Dalton, C Jones, GW Hall, LM Hughes, AV
Citation
Ca. Mills et al., Investigations into a low band gap, semiconducting polymer, SYNTH METAL, 102(1-3), 1999, pp. 1000-1001
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1000 - 1001
Database
ISI
SICI code
0379-6779(199906)102:1-3<1000:IIALBG>2.0.ZU;2-O
Abstract
A low bandgap polymer based on a carbon-bridged dithienyl monomer has been prepared by potentiostatic electrodeposition. Microscopic analysis of the p olymer revealed a generally smooth morphology with scattered features protr uding from the surface. Raman mapping shows the presence of a thickness dep endent fluorescence in the film. Al/polymer/ITO Schottky diodes based on th is new polymer show a small degree of rectification.