Photovoltaic effect on mu c-Si : H(n+)/poly(o-methoxyaniline)/alpha-Si : H(p) structures

Heterostructures, having poly(o-methoxyaniline) (POMA) deposited by spin co ating process as active layer, were built with n-type microcrystalline sili con and p-type amorphous silicon deposited by CVD process near room tempera ture. JxV device characteristic curves showed rectification properties whos e current enhances under visible light illumination. This photomechanism ma y act directly in the bulk polymer, generating photocarriers, or in the p-S i/POMA. interface injecting positive carriers, from Si into the POMA bulk. Photovoltage phenomenon was also observed indicating the possibility of fab ricating photovoltaic solar cells with POMA films.