Characterization of semiconducting polymer laser materials and the prospects for diode lasers

Citation
Md. Mcgehee et al., Characterization of semiconducting polymer laser materials and the prospects for diode lasers, SYNTH METAL, 102(1-3), 1999, pp. 1030-1033
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1030 - 1033
Database
ISI
SICI code
0379-6779(199906)102:1-3<1030:COSPLM>2.0.ZU;2-J
Abstract
By measuring the gain and loss in thin film planar waveguides using a stand ard technique developed for inorganic laser materials, we show that the nar row-line emission from photopumped waveguides of the conjugated polymer pol y(2-butyl-5-(2'- ethyl-hexyl)-1,4-phenylenevinylene) (BuEH-PPV) results fro m amplification of spontaneous emission (ASE). The narrowed linewidth of th e ASE spectrum is determined by gain saturation. The techniques presented o ffer a simple and useful way for evaluating conjugated polymer as materials for solid state lasers. The prospects for making polymer diode lasers are discussed.