Charge injection into OLED's during operation studied by Electroabsorptionscreening

Citation
M. Liess et al., Charge injection into OLED's during operation studied by Electroabsorptionscreening, SYNTH METAL, 102(1-3), 1999, pp. 1075-1076
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1075 - 1076
Database
ISI
SICI code
0379-6779(199906)102:1-3<1075:CIIODO>2.0.ZU;2-Z
Abstract
Organic light emitting devices (OLED) were operated using an AC voltage wit h DC offset (operating voltage). Electroabsorption (EA) signals as a functi on of a DC-offset were measured at 2f. Higher absolute DC offset voltages l ead to a reduction of the EA signal. The effect observed can well be explai ned in terms of an extended electroabsorption model including Thomas-Fermi screening The AC component of the electric field is shielded clue to charge injection caused by the DC offset This new device characterization techniq ue allows monitoring the charge carrier statistics in the device during ope ration. It was found that the EA signal indicates the threshold of monopola r and bipolar charge injection, The presence of negative charges enhances d rastically the injection and presence of positive charges in the device.