Electroluminescence of parasexiphenyl prepared by ion beam assisted deposition.

Authors
Moussant, C Antony, R Moliton, A Froyer, G
Citation
C. Moussant et al., Electroluminescence of parasexiphenyl prepared by ion beam assisted deposition., SYNTH METAL, 102(1-3), 1999, pp. 1093-1094
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1093 - 1094
Database
ISI
SICI code
0379-6779(199906)102:1-3<1093:EOPPBI>2.0.ZU;2-L
Abstract
Ion beams can be used in molecular or macromolecular physics to realize Org anic Light Emitting Diodes (OLEDs). In order to obtain blue light emission, we have realized light emitting diodes with a conjugated oligomer : the pa rasexiphenyl (phi(6)). Parasexiphenyl thin film is obtained by Ion Beam Ass isted Depositon (IBAD). Efficient injection of holes and electrons is provi ded from an ITO anode and calcium cathode. The electroluminescence spectra show that the maximum emission wavelength is not modified by IBAD process b ut we have noticed an increase of the resistivity.